Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
September 10, 2018Advanced Electronic Materials

Recent Advances in van der Waals Heterojunctions Based on Semiconducting Transition Metal Dichalcogenides

View Full Paper
Ask AI
Bookmark
Share

Authors

RLRuiping LiNano Carbon (Poland)
Lain‐Jong Li
Lain‐Jong LiTianjin University of Traditional Chinese Medicine
YCYingchun ChengYanshan University

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Li et al. (2018) studied this question.

synapsesocial.com/papers/6aaf9f2b74b24cee3ca6071fhttps://doi.org/10.1002/aelm.201800270
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Gate‐Controlled BP–WSe<sub>2</sub> Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics2017 · 108 citations
  2. 2Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr 1/3 TaS 22017 · 48 citations
  3. 3Wide-range ideal 2D Rashba electron gas with large spin splitting in Bi2Se3/MoTe2 heterostructure2017 · 32 citations
  4. 4Transition between strong and weak topological insulator in ZrTe5 and HfTe52017 · 101 citations
  5. 5Electronic Transport in Heterostructures of Chemical Vapor Deposited Graphene and Hexagonal Boron Nitride2014 · 19 citations