A new magnetron sputtering apparatus assisted by microwave plasma has been developed to achieve high sputter deposition rates at low gas pressures. In this apparatus, a microwave plasma is produced in a cylindrical multipolar magnetron arrangement and utilized for DC magnetron sputtering deposition. With the assistance of microwave plasma, operation of the magnetron discharge has been achieved at pressures on the order of 10-4 Torr. Aluminum films are deposited in this apparatus at rates greater than 50 nm/min even at the low gas pressure of 2.5×10-4 Torr.
No takes yet. Share an insight, caveat, or question.
Yonesu et al. (1999) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: