Effect of Structural Properties on Electrical Properties of Lanthanum Oxide Thin Film as a Gate Dielectric

The electrical properties of lanthanum oxide was grown by using metal organic chemical vapor deposition (MOCVD) were investigated from the change of structural properties which occurred during the post-annealing process. The as-grown film had a dielectric constant of 18.8, and capacitance equivalent oxide thickness of 1.7 nm. The leakage current density of the film was measured as 2.4×10 -4 A/cm 2 at -1 MV/cm. When the film was annealed at 900°C, the dielectric constant decreased with the increase of the interfacial layer.