In this letter, a high-performance unipolar resistive random access memory with Ni electrode/ HfOx/AlOy/p+-Si substrate structure is reported. Compared with Ni/HfOx/p+-Si devices, a significant improvement in terms of switching parameters such as set/reset voltages, on/off resistance ratio, and resistance distribution is successfully demonstrated. It is believed that the stabilization of the conductive filament generation inside the switching HfOxfilm due to the AlOyincorporation plays a key role for the improved performance.
No takes yet. Share an insight, caveat, or question.
Tran et al. (2011) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: