Doping Profile Analysis in Si by Electrochemical Capacitance‐Voltage Measurements

The electrochemical capacitance‐voltage (ECV) technique was used to measure the carrier concentration profiles in Si. Using the conventional parallel‐equivalent circuit model of the Schottky junction to describe the electrolyte‐silicon barrier we found excellent agreement between ECV and four‐point probe analyses within ±10 to 20% for bulk Si uniformly doped p‐ and n‐type from . In this concentration range accuracy limits are determined mainly by the precise measurement of the area of the electrolyte‐Si contact. For the anodic etching of Si, a constant effective dissolution valence of was used throughout the measurements. Investigations with isotype and anisotype doping transitions were performed employing ECV and other profiling techniques for comparison.