Direct Detection of 100–5000 eV Electrons With Delta-Doped Silicon CMOS and Electron-Multiplying CCD Imagers

We have demonstrated a direct detection of 100-5000 eV electrons with a back-illuminated boron delta-doped hybrid silicon complementary metal-oxide-semiconductor imager operating in full depletion and a silicon electron-multiplying charge-coupled device (CCD) operating in partial depletion. The delta-doping molecular beam epitaxy increases sensitivity to low-energy electrons and improves low-energy electron detection threshold relative to conventional solid-state detectors. We compare the gain measured in these two delta-doped devices with gain measured from control delta-doped CCDs.