Full compositional control of PbS x Se 1−x thin films by the use of acylchalcogourato lead( ii ) complexes as precursors for AACVD

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Selenium and sulfur derivatives of lead(ii) acylchalcogourato complexes have been used to deposit PbSxSe1-x thin films by AACVD. By variation of the mole ratio of sulfur and selenium precursors in the aerosol feed solution the full range of compositions of PbSxSe1-x was obtained, i.e. 0 ≥ x ≥ 1. The films showed no contaminant phases demonstrating the potential for acylchalcogourato metal complexes as precursors for metal chalcogenide thin films. The crystal structure for bis[N,N-diethyl-N'-2-naphthoylthioureato]lead(ii) was solved and displayed the expected decreases in Pb-E bond lengths from the previously reported selenium variant.