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We describe a light scattering technique for measuring the real-time evolution of thin film and surface morphology. By using spectroscopic detection, the technique requires no motion of the sample during the measurement, which makes it compatible with many processing geometries. Results from the growth of strained heteroepitaxial layers of SixGe1−x on Si(001) are presented to demonstrate the technique.
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Chason et al. (1998) studied this question.
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