Deposition of silicon from chlorosilanes is studied. Based on a model for gas‐phase reactions involving , , , and , the reaction constants for relevant gas‐phase reactions are determined. Deposition is analyzed in two ways: one (effusive flux model) using the surface reaction probabilities of surface reactions, and the other (surface reaction model) derived previously by Korec in terms of surface reactions of . Advantages as well as disadvantages of the two models are discussed by comparing fully numerical results with the experimental results available.
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Uichiro Narusawa (1994) studied this question.
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