In this letter, we report on a new solid-state structure for an integrating microdosimeter. The device consists of a silicon bar enclosed by a compound dielectric bilayer of silicon dioxide/parylene acting as an ionization getter/electret. The dielectric bilayer is corona charged to establish a self-biasing structure that achieves high sensitivity without the need for a large applied voltage. For a 0.5 × 0.7 × 0.3 mm3sensor with a dynamic range of 15 Gy, a sensitivity of 50 kΩ/Gy was measured.
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Maleki et al. (2010) studied this question.
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