Electronic Properties of Atomic-Layer-Deposited Al[sub 2]O[sub 3]/Thermal-Nitrided SiO[sub 2] Stacking Dielectric on 4H SiC

We report the first electronic-property results on atomic-layer deposited /thermal-nitrided stacking dielectric on n-type 4H SiC. The effects of the ultrathin thermal-nitrided (2, 4, and ) on the SiC-based metal oxide semiconductor (MOS) characteristics have also been investigated, compared, and explained. A significant improvement in dielectric reliability and dielectric breakdown field has been observed after an ultrathin nitrided oxide has been introduced between and SiC. The best reported results were obtained from stacked with the thickest nitrided oxide .