Orthogonal PbS Nanowire Arrays and Networks and Their Raman Scattering Behavior

Three-dimensional, orthogonal lead sulfide (PbS) nanowire arrays and networks have been prepared by using a simple, atmospheric pressure chemical vapor deposition (APCVD) method. These uniform nanowires (average diameter 30 nm) grow epitaxially from the surface of the initial PbS crystal seeds and form orthogonal arrays and networks in space. The growth mechanism has been explored, and the process was classified as homogeneous, epitaxial growth in the 200 directions. Furthermore, Raman spectra of PbS nanowires are reported here, and their characteristic Raman peak (190 cm(-1), no shoulder) could be used as a unique probe for the study of PbS nanomaterials.