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In this paper, an analytical potential-based model in the subthreshold regime for short-channel junctionless cylindrical surrounding-gate MOSFETs is proposed as the source/drain depletion effect considered. The threshold voltage (Vth), subthreshold slope, and drain-induced barrier lowering are also correspondingly derived, which give explicit explanations of the short-channel effects on junctionless MOSFETs in the subthreshold regime. The compact model is verified by the numerical simulation, and the results match well.
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Xiao et al. (2016) studied this question.
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