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AlGaN Channel High Electron Mobility Transistors with an AlxGa1−xN/GaN Composite Buffer Layer*, Li, Xiang-Dong, Zhang, Jin-Cheng, Zou, Yu, Ma, Xue-Zhi, Liu, Chang, Zhang, Wei-Hang, Wen, Hui-Juan, Hao, Yue
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Li et al. (2015) studied this question.
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