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September 1, 2000IEEE Electron Device Letters

High breakdown GaN HEMT with overlapping gate structure

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NZN.-Q. ZhangHebei University of TechnologySKS. KellerUniversity of California, Santa BarbaraGPGiacinta ParishThe University of Western Australia

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Zhang et al. (2000) studied this question.

synapsesocial.com/papers/6a75cc32f1e99ff85ab216cbhttps://doi.org/10.1109/55.863096
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