Improved breakdown voltage and threshold voltage in normally-off p-GaN HEMT with L-shape gate metal and MIS structure

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1. 1Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: A simulation study2024 · 3 citations
2. 2Threshold Voltage Modulation and Gate Leakage Suppression of Enhancement‐Mode GaN HEMT by Metal/Insulator/p‐GaN Gate Structure2024 · 5 citations
3. 3Semiconducting p-GaN gate HEMT with avalanche-like non-destructive breakdown capability2026 · 1 citations
4. 4A new gate design combined MIS and p-GaN gate structures for normally-off and high on-current operation2024
5. 5Design and Performance Investigation of a Dual p-GaN Recessed Gate High Electron Mobility Transistors for High Threshold Voltage Applications2026