Total Ionizing Dose in Nano-Scaled CMOS Technologies

Despite incredible technological advances in the fabrication of MOS transistors, the widespread use of isolation layers makes the Total Ionizing Dose (TID) a persistent threat to the operation of these devices in ionizing radiation environments. This paper provides a comprehensive review of the past three decades of research on the TID effects in transistors built across various scaled CMOS nodes, ranging from a 1.6-μm planar MOSFET technology to FinFETs produced in a 16-nm node. The focus is on understanding the evolution of the TID effects with the scaling down, as different oxides and channel layouts are employed in the CMOS processes.