Experimental analysis demonstrates strong coupling between exciton diffusion and quantum efficiency in high-purity diamond, highlighting dislocation-mediated recombination mechanisms.
We investigate the lifetime and luminescence quantum efficiency of excitons in extremely high-purity diamond grown by the chemical vapor deposition method. A clear correlation is found between the diffusion coefficient, lifetime, and quantum efficiency. The effect of small strain (magnitude ≈10^-5) assessed using birefringence is also clarified thanks to the effective absence of impurity traps. A surface recombination model, extended for nonradiative recombination at dislocations due to diffusion, is proposed to explain the temperature dependence from 4 to 300 K, which facilitates the derivation of the radiative lifetime. The proposed model is generally applicable to a mixture of excitons and carriers in a wide range of materials with high exciton binding energies.
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Konishi et al. (2020) studied this question.
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