Combined scanning (EBIC) and transmission electron microscopic investigations of dislocations in semiconductors

Statements on the electrical activity of dislocations with respect to the recombination of charge carriers are given, obtained by a combined application of scanning electron microscopy (EBIC technique) and transmission electron microscopy. The results indicate that the strength of recombination at dislocations of different type mainly depends on the degree of their decoration with impurity atoms. Model calculations carried out for special imaging conditions give the possibility to determine the minority carrier diffusion length from the half-width of SEM/EBIC dislocation profiles and allow statements on the recombination-active regions around defects.