Low-temperature preparation and characterization of SrBi2Ta2O9 thin films on (100)-oriented LaNiO3 electrodes

SrBi 2 Ta 2 O 9 (SBT) ferroelectric thin films were prepared by the metalorganic decomposition technique at annealing temperatures of 600 and 650 °C on Pt/Ti/SiO2/Si substrates coated by (100)-oriented LaNiO3 (LNO) metal oxide thin films, which were fabricated by the sol–gel technique combined with a layer-by-layer annealing method at 600 °C. A (200)-predominant SBT thin film can be formed on LaNiO3(100)/Pt/Ti/SiO2/Si substrate at 600 °C. The effect of the LNO oxide electrode on the dielectric and ferroelectric properties of SBT thin film annealed at 600 °C was studied. Although the remanent polarization of the (200)-predominant SBT thin film is not as large as expected, the film can be uniformly polarized and imaged using an atomic force microscope in the piezoelectric mode.