Annealing Effects on AlGaN∕GaN HEMTs Employing Excimer Laser Pulses

A new annealing method employing excimer laser pulses is proposed to improve the transfer characteristics and the breakdown voltage of the high electron mobility transistor (HEMT). The XeCl excimer laser pulses annealed the unpassivated HEMT after the Schottky gate metallization. The interface defects between the Schottky gate metal and the GaN layer decreased due to the lateral heat diffusion of the laser pulses. The experimental results show that the drain current and the peak extrinsic transconductance of the HEMT after laser pulses annealing were and while a virgin device exhibited and , respectively.