⌘+K

Pulse Explore Communities Researchers Journals

Home Communities Explore

November 1, 2008IEEE Transactions on Electron Devices

Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology

M. Jagadesh Kumar Mark A. Reed G.A.J. Amaratunga G. M. Cohen David B. Janes Charles M. Lieber M. Meyyappan Lars‐Erik Wernersson Kang L. Wang R. Chau T. I. Kamins Mark Lundstrom Bin Yu Chongwu Zhou

View at Publisher

Ask AI

Bookmark

Share

Abstract

The 31 papers in this special issue focus on nanowire transistors and cover the modeling, device design and technology of these transistors. Other papers on the same topic are appearing in a special issue of the IEEE Transactions on Nanotechnology.

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Kumar et al. (2008) studied this question.

synapsesocial.com/papers/6ab48dd93481d16aff077d46 https://doi.org/10.1109/ted.2008.2006781

View at Publisher

Ask AI

Bookmark

Share

Keep reading

Synapse has enriched 5 related papers. Consider them for comparative context:

1Investigation on the Cumulative Degradation in p-GaN Gate HEMTs Under Synergistic Electrical Stress and Heavy Ion IrradiationIEEE Transactions on Electron Devices · Fri,
2P-Channel GaN FETs on Low-Doped Layers Enabled by Thermal Mg-Diffusion Process: Demonstration and CharacterizationIEEE Transactions on Electron Devices · Tue,
3Modeling Leakage Current Variations Starting From Threshold Voltage Shift in SiC MOSFETs Submitted to Positive Gate StressIEEE Transactions on Electron Devices · Tue,
4Investigation of Gate Field-Plate Effects on f max Improvement in GaN HEMTs for RF ApplicationsIEEE Transactions on Electron Devices · Fri,
5Mechanism Analysis and Small-Signal Modeling of β -Ga 2 O 3 -Based Enhancement-Mode FinFETsIEEE Transactions on Electron Devices · Mon,

More from IEEE Transactions on Electron Devices

Surface Mount Ultra-Thin Millimeter-Wave Bandpass Filter Chip Based on Lithium Niobate With Ultralow Loss and Sharp Roll OffTue,
Rapidly Erasable Ambipolar SnO Charge-Trap Memory With Low Dynamic Energy ConsumptionWed,
Al₂O₃/SiN/AlN/GaN MIS-HEMTs on Silicon for mm-Wave Amplifiers, Switches, and LNAsMon,
Unimodal Multitask Deep Learning for Accurate DC and RF Modeling and Prediction of InP HBTMon,
The Degradation Mechanism of GaN RF HEMTs Under High-Temperature Operation Stress: Effects of High Drain Current and High Drain VoltageThu,