A channel hot carrier current and the failure rate of n- and p-channel MOS transistors are both increased by one to two orders of magnitude by forward biasing the substrate or source p/n junction. Correlations with the hydrogen-bond-breaking theory give a threshold kinetic energy of 3.06 ± 0.05 eV for interface trap generation by hot carriers.
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Sah et al. (1998) studied this question.
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