A new humidity microsensor using barium titanate thin film in the metal-insulator-semiconductor (MIS) structure has been developed. These devices have capacitances sensitive to changes of relative humidity (RH), with a sensitivity of 300-percent change of capacitance corresponding to a humidity change from 27 to 90-percent RH at a testing frequency Of 1 MHz. The capacitance-voltage (CV) and current-voltage (I-V) characteristics for various relative humidities are presented. Temperature and frequency effects on sensor performance are also presented.
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Chen et al. (1984) studied this question.
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