Improvement in electron holographic phase images of focused-ion-beam-milled GaAs and Si p-n junctions by in situ annealing

Low temperature (200–600°C) annealing in the transmission electron microscope (TEM) is used to provide a significant noise reduction in phase images of focused-ion-beam-milled GaAs and Si p-n junctions recorded using off-axis electron holography, as well as increasing the measured phase shifts across the junctions. Our results suggest that annealing removes defects resulting from Ga+ implantation and reactivates dopant atoms in the thin TEM specimens. In GaAs, electrically inactive surface layer thicknesses are reduced from 80to17nm on each specimen surface after annealing at 500°C. In Si the improvement is from 25to5nm.