Simulation of nucleon-induced nuclear reactions in a simplified SRAM structure: scaling effects on SEU and MBU cross sections

Academic 128/spl times/128 bit structures are simulated to study soft error cross sections induced by high-energy nucleons (n/p) in SRAM memories. The distributions of secondary ions are obtained by the nuclear high energy transport code and analyzed in terms of energy deposited in the sensitive volume of each memory cell. Multiple-bit upset cross sections are compared to single-event upset cross sections, and trends associated with scaling effects are presented.