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The scattering mechanisms in a two-dimensional semimetal based on a HgTe quantum well, where the electron and hole densities are controlled over a wide range by applying the gate voltage, have been studied. It is shown that impurity scattering prevails in this system at low temperatures. Interparticle scattering (in this case, electrons and holes) has been observed to directly affect the resistance of the metal.
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Olshanetsky et al. (2009) studied this question.
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