A 90-nm CMOS Doherty Power Amplifier With Minimum AM-PM Distortion

A linear Doherty amplifier is presented. The design reduces AM-PM distortion by optimizing the device-size ratio of the carrier and peak amplifiers to cancel each other's phase variation. Consequently, this design achieves both good linearity and high backed-off efficiency associated with the Doherty technique, making it suitable for systems with large peak-to-average power ratio (WLAN, WiMAX, etc.). The fully integrated design has on-chip quadrature hybrid coupler, impedance transformer, and output matching networks. The experimental 90-nm CMOS prototype operating at 3.65 GHz achieves 12.5% power-added efficiency (PAE) at 6 dB back-off, while exceeding IEEE 802.11a -25 dB error vector magnitude (EVM) linearity requirement (using 1.55-V supply). A 28.9 dBm maximum Psat is achieved with 39% PAE (using 1.85-V supply). The active die area is 1.2 mm/sup 2/.