Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates

We report on the fabrication and characterization of vertical InAs nanowire channel field effect transistors (FETs) with high- k /metal gate-all-around structures. Single InAs nanowires were grown on Si substrates by the selective-area metalorganic vapor phase epitaxy method. The resultant devices exhibited n-channel FET characteristics with a threshold voltage of around -0.1 V. The best device exhibited maximum drain current ( I DSmax / w G ), maximum transconductance ( g mmax / w G ), on–off ratio ( I ON/OFF ), subthreshold slope ( SS ) of 83 µA/µm, 83 µS/µm, 10 4 , and 320 mV/decade, respectively, for a nanowire diameter of 100 nm.