In this paper, a novel dual-band transmission-line parallel Doherty amplifier architecture for active antenna arrays and base-station applications in next-generation communication systems is presented. The carrier and peaking amplifiers using GaN HEMT Cree CGH40010P devices are designed based on the reactance compensation technique to provide optimum Class-E impedance seen by the device output at the fundamental frequency across the wide frequency range achieving drain efficiencies over 73% across the frequency range from 1.7 to 2.7 GHz. In a single-carrier WCDMA operation mode with a peak-to-average ratio of 6.5 dB, high drain efficiencies of 40%-45% can be achieved at an average output power of 39 dBm with an ACLR1of about -30 dBc at center bandwidth frequencies of 2.14 and 2.655 GHz.
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Grebennikov et al. (2012) studied this question.
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