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A magnetic-field sensor system integrated in CMOS technology with additional processing steps necessary for sensor fabrication is presented. The system contains a magnetoresistive permalloy microbridge acting as a sensor, temperature compensation circuitry, programmable readout electronics, reference voltage bias, and clock generation. It features maximum magnetic flux sensitivity of 70 mV//spl mu/T (corresponds to the magnetic-field sensitivity of 88.2 mV/(A/m) at /spl mu//sub r/=1) and its temperature gain is below 260 ppm//spl deg/C in the range between -50/spl deg/C and +100/spl deg/C.>
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Sprotte et al. (1994) studied this question.
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