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Ga 2 O 3 /ITO films were prepared by magnetron sputtering on quartz glass substrates. The transmittance and sheet resistance of ITO films and Ga 2 O 3 /ITO films were measured by using a double beam spectrophotometer and four point probes. The effect of the ITO layer and Ga 2 O 3 layer thickness on the electrical and optical properties of Ga 2 O 3 /ITO bi-layer films were investigated in detail. Ga 2 O 3 (50 nm)/ITO (23 nm) films exhibited a low sheet resistance of 323 Ω/□ and high deep ultraviolet transmittance of 77.6% at a wavelength of 280 nm. The ITO layer controls the ultraviolet transmittance and sheet resistance of Ga 2 O 3 /ITO films. The Ga 2 O 3 layer thickness has a marked effect on the transmission spectral shape of Ga 2 O 3 /ITO films in the violet spectral region.
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Jin-liang et al. (2010) studied this question.
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