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Experimental results on two GaAs PHEMT MMIC Class F Power Amplifiers for X‐band applications are reported, aimed to validate a novel devices' combination method. In particular, 28.1 dBm output power with 44% power added efficiency and 30.6 dBm output power with 40% of power added efficiency were measured at 9.6 GHz, for single and combined devices amplifiers respectively. Both realised amplifiers exhibit 12% operating bandwidth.
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Colantonio et al. (2006) studied this question.
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