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This paper deals with the preparation of Zirconium Nitride films by DC reactive magnetron sputtering. Films were deposited on silicon substrates at room temperature. Nitrogen partial pressure was varied from 4 × 10−5 to 10 × 10−5 m bar and the effect on the structural, electrical, optical properties of the films was systematically studied. The films formed at a nitrogen pressure of 6 × 10−5 mbar showed low electrical resistivity of 1.726 × 10−3 Ω.cm. The deposited films were found to be crystalline with refractive index and extinction coefficient 1.95 and 0.4352 respectively. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Bhuvaneswari et al. (2003) studied this question.
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