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Semiconductor microdisk lasers serve as a sensitive probe of GaAs/AlGaAs microstructure surface passivation. A 40 nm thick encapsulating layer of SiNx over a sulphide passivated microdisk laser dramatically improved the laser lifetime. Annealing the microdisk laser at 400°C for 300s resulted in a ten-fold increase in the laser output.
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Hobson et al. (1993) studied this question.
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