Surface electronic structure of semiconductor ( p- and n-Si) electrodes in electrolyte solution

The topography and the surface electronic structure of p- and n-Si (100) single crystal electrodes have been examined in a sulfuric acid solution by means of scanning tunneling microscopy (STM). It is shown that hydrogen-terminated Si surfaces are resistant to oxidation even in aqueous solutions. The tunneling current-electrode potential (I–E) curve suggests the existence of surface states. STM images of photoelectrochemically oxidized surfaces have been obtained.