Modulated photoluminescence of shallow levels in arsenic-doped Hg1−xCdxTe (x≈0.3) grown by molecular beam epitaxy

Shallow levels in arsenic-doped Hg1−xCdxTe grown by molecular beam epitaxy have been investigated by temperature- and excitation power-dependent modulated photoluminescence spectroscopy. The ionization energies of the shallow levels of AsTe, AsHg, and the AsHg–VHg complex are preliminarily determined to be about 11.0, 8.5, and 33.5meV, respectively. Correspondingly, the forming energy of the AsHg–VHg complex has been deduced to be approximately 10.5meV. The results could be used as guidelines for the material growth or the fabrication of related devices.