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We have applied the technique of below band-gap photoluminescence to the narrow gap semiconductor Hg0.7Cd0.3Te. A single peak in the observed photoluminescence spectra for liquid phase epitaxial samples has been interpreted as being due to a spontaneous transition from a deep donor level at approximately 0.4Eg to the valence band. The energy associated with this photoluminescence peak corresponds closely to deep level activation energies obtained by both optical modulation spectroscopy and thermally excited relaxation characterization techniques.
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Polla et al. (1984) studied this question.
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