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The lifetime of excess photogenerated carriers has been measured as a function of temperature and carrier concentration in p-type Hg0.68Cd0.32Te by contactless optical modulation spectroscopy. An excess carrier lifetime related to impurity substitution on ionized Hg sites is suggested as the dominant Shockley–Read recombination mechanism observed in this material.
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Polla et al. (1983) studied this question.
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