The Letter examines the high-frequency performance of sub-0.1 μm gate InAlAs/InGaAs HEMT with a thin InAs layer inserted into the InGaAs channel. The transconductance is 2.1 S/mm and the current-gain cutoff frequency is 264 GHz using a 0.08 μm-long gate.
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Akazaki et al. (1992) studied this question.
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