This study is intended to realize the high efficiency and high-grade quality processing of the wide gap semiconductor material substrate (SiC, GaN). We promote the research and development of the total process that fused each technique (device / system, polishing pad, slurry, etc.) into one ideally. By using a high-pressure / high-rotation processing machine and the innovative polishing pad which we developed in this study, it realized several-fold processing efficiency and large improvement of high-grade quality processing in comparison with a conventional technique.
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Yamazaki et al. (2014) studied this question.
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