Improving Read Disturb Characteristics by Using Double Common Source Line and Dummy Switch Architecture in Multi Level Cell NAND Flash Memory with Low Power Consumption, Kang, Myounggon, Park, Ki-Tae, Song, Youngsun, Lim, Youngho, Suh, Kang-Deog, Shin, Hyungcheol
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Kang et al. (2011) studied this question.
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