β‐CoGa and ϵ‐NiIn Films from Organometallic Single‐Source Precursors: Ligand‐Control of the Film Composition

The chemical vapor deposition of binary materials from single-source precursors is particularly advantageous when all the factors essential for the layering process are incorporated in the molecular structure of the precursor, and thus only pressure and temperature remain as regulating parameters. This concept is demonstrated with heterodinuclear complexes such as 1, whose mild pyrolysis results in intermetallic films, which are of interest for microelectronic purposes.