We measured the Seebeck coefficient of P-doped ultrathin silicon-on-insulator (SOI) layers with thicknesses of 2–100 nm. The dependence of the coefficient on the impurity concentration was investigated, and was shown to be in good agreement with that of bulk Si for SOI thicknesses above 6 nm. In addition, it was found to decrease with increasing impurity concentration, which is usually observed in semiconductor materials. However, for doping levels above 3.5 × 10 19 cm -3 , the Seebeck coefficient was observed to increase. This is likely to be due to the influence of an impurity band.
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Salleh et al. (2009) studied this question.
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