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The effect of a post oxidation anneal at 1000/spl deg/C in a N/sub 2/ ambient of the thermally grown Si/SiO/sub 2/ system was investigated using vacuum ultraviolet irradiation for determining the generation of interface traps of the Al metallized system in combination with positron annihilation spectroscopy to characterize the structure of the oxide network. A correlation was found between the generation of interface traps and the S parameter of the positron trapping sites in the oxide close to the Si. It appears likely that the positrons are trapped in the larger near-interfacial oxide network interstices. These interstices could act as scavengers for the metastable intermediate (atomic hydrogen or excitons) involved in the generation of the interface traps.
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Clement et al. (1995) studied this question.
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