Measurements of 1/f noise were performed including and excluding the influence of the contacts formed by metallic aluminum layers (MBE) deposited on the p+-type GaAs (MBE). The results show that the MBE process can produce non-alloyed ohmic contacts free of noise. The 1/f noise of bulk p+-GaAs is characterised by αlatt ≃ 5 ×10-4.
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Chen et al. (1994) studied this question.
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