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A chemical-state-resolved x-ray standing-wave analysis using the chemical shift in photoelectron spectra was performed for a GaAs(001) surface treated with a (NH₄{)}₂Sₓ solution. The sulfur atoms in the S-Ga chemical state on the surface are at the bridge site but are not highly ordered. The degree of ordering of the sulfur atoms in the S-Ga chemical state is improved, and randomly distributed sulfur atoms in the S-As and S-S chemical states disappear as a result of post annealing.
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Sugiyama et al. (1995) studied this question.
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