Cu 2 ZnSnS 4 (CZTS) films were successfully fabricated on glass by sulfurizing the sputtered Zn/Sn/Cu multilayer precursor. The preferred (112) orientation was observed by X-ray diffraction and the Raman peaks at 251, 285, 333, and 359 cm -1 were detected. The optical band energy of CZTS film was estimated to be about 1.5 eV. Finally, a novel CZTS/amorphous silicon (α-Si) solar cell was prepared. The open circuit voltage and the short circuit current density were 510 mV and 8.1 mA/cm 2 , respectively.
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Jiang et al. (2011) studied this question.
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