It is demonstrated that the impedance of a forward-biased p-i-n diode is definable as a function of frequency and depends on the diode's geometry and electronic properties. A procedure for calculating the equivalent series p-i-n diode impedance is presented and compared with experimental resistance versus frequency data for silicon p-i-n diodes. A procedure is also outlined for determining diode parameters for a desired resistance-frequency response.>
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Caverly et al. (1989) studied this question.
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