Answers are grounded in this paper and cite their sources.
The effect of ≈ 2.0 MeV-electron bombardment up to 1 × 1019 cm−2 at 300 K and post-irradiated isochronal annealing in the temperature range 20 to 500 °C on positron annihilation and electrical properties of InAs crystals are investigated. In irradiated samples positron trapping occurs in acceptor-type defects, supposedly VIn- The post-irradiated isochronal annealing in the temperature range 150 to 300°C reveals the formation of vacancy clusters, supposedly divacancies of In. The temperature dependence of positron trapping is investigated in the temperature range 77 to 300 K in non-irradiated and irradiated InAs samples. A positron lifetime τ = (285 ± 2) ps is estimated in initial InAs crystals.
No takes yet. Share an insight, caveat, or question.
Brudnyi et al. (1982) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: